Ankudinov A., Dunaevskiy M., Khalisov M., Khrapova E., Krasilin A. Atomic force microscopy bending tests of a suspended rod-shaped object: Accounting for object fixing conditions. Physical Review E. 2023. Vol. 107. No. 2. pp. 025005.
Dunaevskiy M. The study of the triboelectric potential in h-BN and MoS2 thin layers. Ferroelectrics. 2023. Vol. 604. No. 1. pp. 8-13.
Alekseev P.A., Borodin B.R., Geydt P., Khayrudinov V., Bespalova K., Kirilenko D.A., Reznik R.R., Nashchekin A.V., Haggren T., Lahderanta E., Cirlin G.E., Lipsanen H., Dunaevskiy M.S. Effect of crystal structure on the Young’s modulus of GaP nanowires. Nanotechnology. 2021. Vol. 32. No. 38. pp. 385706.
Alekseev P.A., Sharov V.A., Borodin B.R., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. Effect of the uniaxial compression on the GaAs nanowire solar cell. Micromachines. 2020. Vol. 11. No. 6. pp. 581.
Borodin B.R., Benimetckiy F.A., Dunaevskiy M.S., Alekseev P.A. Anisotropy of local anodic oxidation process in thin MoSe2 films. Journal of Physics: Conference Series. 2020. Vol. 1697. No. 1. pp. 012096.
Borodin B.R., Alekseev P.A., Dunaevskiy M.S., Khayrudinov V., Lipsanen H. Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy. Journal of Physics: Conference Series. 2019. Vol. 1410. No. 1. pp. 012228.
Sharov V.A., Alekseev P.A., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. Triboelectric current generation in InP. Journal of Physics: Conference Series. 2019. Vol. 1400. No. 6. pp. 066055.
Sharov V.A., Alekseev P.A., Borodin B.R., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. InP/Si Heterostructure for High-Current Hybrid Triboelectric/Photovoltaic Generation. ACS Applied Energy Materials. 2019. Vol. 2. No. 6. pp. 4395-4401.
Borodin B.R., Benimetskiy F.A., Dunaevskiy M., Sharov V.A., Smirnov A.N., Davydov V.Y., Lahderanta E., Lebedev S.P., Lebedev A.A., Alekseev P.A. MoSe2/graphene/6H-SiC heterojunctions: energy band diagram and photodegradation. Semiconductor Science and Technology. 2019. Vol. 34. No. 12. pp. 105794.R1.
Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Kirilenko D.A., Ilkiv I.V., Reznik R.R., Cirlin G.E., Berkovits V.L. Control of Conductivity of In(x)G(a1-x)As Nanowires by Applied Tension and Surface States. Nano Letters. 2019. Vol. 19. No. 7. pp. 4463-4469.
Butko A.V., Butko V.Y., Lebedev S.P., Lebedev A.A., Davydov V.Y., Smirnov A.N., Eliseyev I.A., Dunaevskiy M., Kumzerov Y.A. State memory in solution gated epitaxial graphene. Applied Surface Science. 2018. Vol. 444. pp. 36-41.
Alekseev P.A., Dunaevskiy M.S., Monakhov A.M., Dudelev V.V., Sokolovskii G.S., Arinero R., Teissier R., Baranov A.N. Half-disk laser: Insight into the internal mode structure of laser resonators. Optics express. 2018. Vol. 26. No. 11. pp. 14433-14443.
Alekseev P.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Smirnov A.N., Kirilenko D.A., Davydov V.Y., Berkovits V.L. Unified mechanism of the surface Fermi level pinning in III-As nanowires. Nanotechnology. 2018. Vol. 29. No. 31. pp. 314003.
Алексеев П.А., Бородин Б.Р., Дунаевский М.С., Смирнов А.Н., Лебедев С.П., Лебедев А.А. Локальное анодное окисление слоев графена на SIC. Письма в Журнал технической физики. 2018. Т. 44. № 9. С. 34-40.
Алексеев П.А., Дунаевский М.С., Михайлов А.О., Лебедев С.П., Лебедев А.А., Илькив И.В., Хребтов А.И., Буравлев А.Д., Цырлин Г.Э. Электрические свойства gaas нитевидных нанокристаллов, выращенных на гибридных подложках графен/sic. Физика и техника полупроводников. 2018. Т. 52. № 12. С. 1507-1511.
Borodin B.R., Dunaevskiy M.S., Benimetckiy F.A., Lebedev S.P., Lebedev A.A., Alekseev P.A. Kelvin probe microscopy of MoSe 2 monolayers on graphene. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 8. pp. 081031.
Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Soshnikov I.P., Reznik R.R., Lisak V., Lahderanta E., Cirlin G.E. GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells. Semiconductors. 2018. Vol. 52. No. 5. pp. 609-611.
Dunaevskiy M.S., Alekseev P.A., Monahov A.M., Sokolovskii G.S., Baranov A.N., Teissier R. Visualization of spatial structure of optical modes in half-disk lasers. Journal of Physics: Conference Series. 2018. Vol. 1092. No. 1. pp. 012027.
Alekseev P.A., Borodin B.R., Dunaevskii M.S., Smirnov A.N., Davydov V.Y., Lebedev S.P., Lebedev A.A. Local Anodic Oxidation of Graphene Layers on SiC. Technical Physics Letters. 2018. Vol. 44. No. 5. pp. 381-383.
Lebedev A.A., Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Eliseyev I.A., Dunaevskiy M.S., Gushchina E.V., Bokai K., Pezoldt J. High Quality Graphene Grown by Sublimation on 4H-SiC (0001). Semiconductors. 2018. Vol. 52. No. 14. pp. 1882-1885.
Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Berkovits V.L. Electromechanical Switch Based on InxGa1-xAs Nanowires. Semiconductors. 2018. Vol. 52. No. 14. pp. 1833-1835.
Lebedev A.A., Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Levitskii V.S., Eliseyev I.A., Alekseev P.A., Dunaevskiy M.S., Rybkin A.G., Novikov S.V., Makarov Y.N. Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method. Journal of Physics: Conference Series. 2018. Vol. 951. No. 1. pp. 012007.
Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Lysak V.V., Cirlin G.E., Reznik R.R., Khrebtov A.I., Soshnikov I.P., Lahderanta E. Piezoelectric current generation in wurtzite GaAs nanowires. Physica Status Solidi (RRL)- Rapid Research Letters. 2018. Vol. 12. No. 1. pp. 1700358.
Alekseev P.A., Borodin B.R., Benimetskiy F.A., Smirnov A.N., Davydov V.Y., Lebedev S.P., Lebedev A.A., Dunaevskiy M.S. Optical and electrical properties of the MoSe2/graphene heterostructures. Journal of Physics: Conference Series. 2018. Vol. 1092. No. 1. pp. 012002.
Alekseev P.A., Dunaevskiy M., Kirilenko D.A., Smirnov A.N., Davydov V.Y., Berkovits V.L. Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation. Journal of Applied Physics. 2017. Vol. 121. No. 7. pp. 074302.
Alekseev P.A., Geydt P., Dunaevskiy M.S., Lahderanta E., Haggren T., Kakko J.P., Lipsanen H. I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide. Applied Physics Letters. 2017. Vol. 111. No. 13. pp. 132104.
Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Levitskii V.S., Eliseyev I.A., Alekseev P.A., Dunaevskiy M.S., Vilkov O.Y., Rybkin A.G., Lebedev A.A. Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). Semiconductors. 2017. Vol. 51. No. 8. pp. 1072-1080.
Давыдов В.Ю., Усачев Д.Ю., Лебедев С.П., Смирнов А.Н., Левицкий В.С., Елисеев И.А., Алексеев П.А., Дунаевский М.С., Вилков О.Ю., Рыбкин А.Г., Лебедев А.А. Исследование кристаллической и электронной структуры графеновых пленок, выращенных на 6H-SIC (0001). Физика и техника полупроводников. 2017. Т. 51. № 8. С. 1116-1124.
Dunaevskiy M.S., Geydt P., Lakhderanta E., Alekseev P., Haggren T., Kakko J., Jiang H., Lipsanen H. Young’s Modulus of Wurtzite and Zinc Blende InP Nanowires. Nano Letters. 2017. Vol. 17. No. 6. pp. 3441-3446.
Sharov V.A., Dunaevskiy M.S., Kryzhanovskaya N.V., Polubavkina Y.S., Alekseev P.A. Light absorption by an atomic force microscope probe. Journal of Physics: Conference Series. 2017. Vol. 816. No. 1. pp. 012036.
Alekseev P.A., Dunaevskiy M.S., Monakhov A.M., Dudelev V.V., Sokolovskii G.S., Teissier R., Baranov A.N. Spatial mode structure in a half-disk cavity laser. 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). 2017. pp. 1.
Geydt P., Dunaevskiy M.S., Alekseev A., Kakko J.P., Haggren T., Lahderanta E., Lipsanen H. Direct measurement of elastic modulus of InP nanowires with Scanning Probe Microscopy in PeakForce QNM mode. Journal of Physics: Conference Series. 2016. Vol. 769. No. 1. pp. 012029.
Alekseev P.A., Dunaevskiy M.S., Monakhov A.M., Dudelev V.V., Sokolovskii G.S., Baranov A.N., Teissier R. AFM visualization of half-disk WGM laser modes. International Conference Laser Optics, LO 2016. 2016. pp. R320.
Dunaevskiy M.S., Alekseev P., Dontsov A., Monakhov A., Girard P., Arinero R., Teissier R., Baranov A. Apertureless SPM method of light detection. AIP Conference Proceedings. 2016. Vol. 1748. pp. 020002.
Geydt P., Alekseev P.A., Dunaevskiy M.S., Haggren T., Kakko J.P., Lahderanta E.M., Lipsanen H.K. Influence of surface passivation on electric properties of individual GaAs nanowires studied by current-voltage AFM measurements. Lithuanian Journal of Physics. 2016. Vol. 56. No. 2. pp. 92-101.
Geydt P., Alekseev P., Dunaevskiy M., Lahderanta E., Haggren T., Kakko J.P., Lipsanen H.K. Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope. Journal of Physics: Conference Series. 2015. Vol. 661. No. 1. pp. 012031.
Dement'Ev P.A., Alekseev P.A., Dunaevskii M.S., Aleshin A.N. Behavior of charges in the active zone of composite OFET under the source-drain electric field. Journal of Physics: Conference Series. 2015. Vol. 661. No. 1. pp. 012029.
Dunaevskiy M., Dontsov A., Alekseev P., Monakhov A., Baranov A., Arinero R., Teissier R., Titkov A. Apertureless scanning microscope probe as a detector of semiconductor laser emission. Applied Physics Letters. 2015. Vol. 106. No. 17. pp. 171105.
Alekseev P.A., Dunaevskii M.S., Slipchenko S.O., Podoskin A.A., Tarasov I.S. Mapping of laser diode radiation intensity by atomic-force microscopy. Technical Physics Letters. 2015. Vol. 41. No. 9. pp. 870-873.
Alekseev P.A., Dunaevskii M.S., Ulin V.P., Lvova T.V., Filatov D.O., Nezhdanov A.V., Mashin A.I., Berkovits V.L. Nitride surface passivation of GaAs nanowires: Impact on surface state density. Nano Letters. 2015. Vol. 15. No. 1. pp. 63-68.
Gushchina E.V., Dunaevskii M.S., Alekseev P.A., Ozben E., Makarenko I.V., Titkov A.N. Behavior of charges locally injected into nanothin high-k SmScO3 dielectric. Technical Physics. 2014. Vol. 59. No. 10. pp. 1540-1544.
Dement'Ev P.A., Dunaevskii M.S., Aleshin A.N., Titkov A.N., Makarenko I.V. Charge carrier accumulation and relaxation effects in the active region of polymer and composite (polymer-gold nanoparticles) field-effect transistor structures. Physics of the Solid State. 2014. Vol. 56. No. 5. pp. 1054-1057.
Dunaevskii M.S., Alekseev P.A., Lepsa M., Grutzmacher D., Titkov A.N. Charge accumulation on the surface of GaAs nanowires near the Schottky contact. Technical Physics Letters. 2013. Vol. 39. No. 2. pp. 209-212.
Alekseev P.A., Dunaevskii M.S., Gushchina E.V., Ozben E., Lahderanta E., Titkov A.N. Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate. Technical Physics Letters. 2013. Vol. 39. No. 5. pp. 427-430.
Dunaevskii M.S., Alekseev P., Monakhov A., Titkov A., Baranov A., Teissier R., Arinero R., Girard P. Near field imaging of a semiconductor laser by scanning probe microscopy without a photodetector. Applied Physics Letters. 2013. Vol. 103. No. 5. pp. 053120.
Alekseev P.A., Dunaevskii M.S., Stovpyaga A.V., Lepsa M., Titkov A.N. Measurement of Young's modulus of GaAs nanowires growing obliquely on a substrate. Semiconductors. 2012. Vol. 46. No. 5. pp. 641-646.
Dunaevskii M.S., Alekseev P., Girard P., Lashkul A., Lahderanta E., Titkov A. Analysis of the lateral resolution of electrostatic force gradient microscopy. Journal of Applied Physics. 2012. Vol. 112. No. 6. pp. 064112.
Dunaevskii M.S., Alekseev P., Girard P., Lahderanta E., Lashkul A., Titkov A. Kelvin probe force gradient microscopy of charge dissipation in nano thin dielectric layers. Journal of Applied Physics. 2011. Vol. 110. No. 8. pp. 084304.
Dunaevskii M.S., Nikolaeva M., Ionov A. On the effect of polymer film switching into a high-conductivity state during metal electrode melting. Technical Physics. 2010. Vol. 55. No. 1. pp. 144-146.
Dunaevskii M.S., Dement'Ev P.A., Samsonenko Y.B., Cirlin G.E., Titkov A.N. Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer. Semiconductors. 2010. Vol. 44. No. 5. pp. 610-615.
Dunaevskii M.S., Kunitsyna E., Lvova T.V., Terent'Ev Y., Semenov A., Solov'Ev V., Meltser B., Ivanov S.V., Yakovlev Y.P. Wet sulfur passivation of GaSb(100) surface for optoelectronic applications. Applied Surface Science. 2010. Vol. 256. No. 18. pp. 5644-5649.
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