Bachinin S.V., Mezenov Y.A., Kenzhebaeva Y.A., Efimova A.S., Alekseevskiy P.V., Poloneeva D., Liubimova A.V., Povarov S.A., Shirobokov V.P., Dunaevskiy M.S., Falchevskaya A.S., Потапов А.С., Селютин А.А., Boulet P., Kulakova A.N., Milichko V.A. Transformation of three-dimensional metal-organic frameworks into nanosheets with enhanced memristive behavior for electronic data processing. Science Advances. 2025. pp. 1-19.
Ankudinov A., Dunaevskiy M., Khalisov M., Khrapova E., Krasilin A. Atomic force microscopy bending tests of a suspended rod-shaped object: Accounting for object fixing conditions. Physical Review E. 2023. Vol. 107. No. 2. pp. 025005.
Dunaevskiy M. The study of the triboelectric potential in h-BN and MoS2 thin layers. Ferroelectrics. 2023. Vol. 604. No. 1. pp. 8-13.
Alekseev P.A., Borodin B.R., Geydt P., Khayrudinov V., Bespalova K., Kirilenko D.A., Reznik R.R., Nashchekin A.V., Haggren T., Lahderanta E., Cirlin G.E., Lipsanen H., Dunaevskiy M.S. Effect of crystal structure on the Young’s modulus of GaP nanowires. Nanotechnology. 2021. Vol. 32. No. 38. pp. 385706.
Borodin B.R., Benimetckiy F.A., Dunaevskiy M.S., Alekseev P.A. Anisotropy of local anodic oxidation process in thin MoSe2 films. Journal of Physics: Conference Series. 2020. Vol. 1697. No. 1. pp. 012096.
Alekseev P.A., Sharov V.A., Borodin B.R., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. Effect of the uniaxial compression on the GaAs nanowire solar cell. Micromachines. 2020. Vol. 11. No. 6. pp. 581.
Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Kirilenko D.A., Ilkiv I.V., Reznik R.R., Cirlin G.E., Berkovits V.L. Control of Conductivity of In(x)G(a1-x)As Nanowires by Applied Tension and Surface States. Nano Letters. 2019. Vol. 19. No. 7. pp. 4463-4469.
Borodin B.R., Alekseev P.A., Dunaevskiy M.S., Khayrudinov V., Lipsanen H. Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy. Journal of Physics: Conference Series. 2019. Vol. 1410. No. 1. pp. 012228.
Sharov V.A., Alekseev P.A., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. Triboelectric current generation in InP. Journal of Physics: Conference Series. 2019. Vol. 1400. No. 6. pp. 066055.
Sharov V.A., Alekseev P.A., Borodin B.R., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. InP/Si Heterostructure for High-Current Hybrid Triboelectric/Photovoltaic Generation. ACS Applied Energy Materials. 2019. Vol. 2. No. 6. pp. 4395-4401.
Borodin B.R., Benimetskiy F.A., Dunaevskiy M., Sharov V.A., Smirnov A.N., Davydov V.Y., Lahderanta E., Lebedev S.P., Lebedev A.A., Alekseev P.A. MoSe2/graphene/6H-SiC heterojunctions: energy band diagram and photodegradation. Semiconductor Science and Technology. 2019. Vol. 34. No. 12. pp. 105794.R1.
Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Soshnikov I.P., Reznik R.R., Lisak V., Lahderanta E., Cirlin G.E. GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells. Semiconductors. 2018. Vol. 52. No. 5. pp. 609-611.
Алексеев П.А., Дунаевский М.С., Михайлов А.О., Лебедев С.П., Лебедев А.А., Илькив И.В., Хребтов А.И., Буравлев А.Д., Цырлин Г.Э. Электрические свойства gaas нитевидных нанокристаллов, выращенных на гибридных подложках графен/sic. Физика и техника полупроводников. 2018. Т. 52. № 12. С. 1507-1511.
Алексеев П.А., Бородин Б.Р., Дунаевский М.С., Смирнов А.Н., Лебедев С.П., Лебедев А.А. Локальное анодное окисление слоев графена на SIC. Письма в Журнал технической физики. 2018. Т. 44. № 9. С. 34-40.
Lebedev A.A., Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Eliseyev I.A., Dunaevskiy M.S., Gushchina E.V., Bokai K., Pezoldt J. High Quality Graphene Grown by Sublimation on 4H-SiC (0001). Semiconductors. 2018. Vol. 52. No. 14. pp. 1882-1885.
Alekseev P.A., Borodin B.R., Benimetskiy F.A., Smirnov A.N., Davydov V.Y., Lebedev S.P., Lebedev A.A., Dunaevskiy M.S. Optical and electrical properties of the MoSe2/graphene heterostructures. Journal of Physics: Conference Series. 2018. Vol. 1092. No. 1. pp. 012002.
Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Berkovits V.L. Electromechanical Switch Based on InxGa1-xAs Nanowires. Semiconductors. 2018. Vol. 52. No. 14. pp. 1833-1835.
Lebedev A.A., Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Levitskii V.S., Eliseyev I.A., Alekseev P.A., Dunaevskiy M.S., Rybkin A.G., Novikov S.V., Makarov Y.N. Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method. Journal of Physics: Conference Series. 2018. Vol. 951. No. 1. pp. 012007.
Alekseev P.A., Borodin B.R., Dunaevskii M.S., Smirnov A.N., Davydov V.Y., Lebedev S.P., Lebedev A.A. Local Anodic Oxidation of Graphene Layers on SiC. Technical Physics Letters. 2018. Vol. 44. No. 5. pp. 381-383.
Dunaevskiy M.S., Alekseev P.A., Monahov A.M., Sokolovskii G.S., Baranov A.N., Teissier R. Visualization of spatial structure of optical modes in half-disk lasers. Journal of Physics: Conference Series. 2018. Vol. 1092. No. 1. pp. 012027.
Alekseev P.A., Dunaevskiy M.S., Monakhov A.M., Dudelev V.V., Sokolovskii G.S., Arinero R., Teissier R., Baranov A.N. Half-disk laser: Insight into the internal mode structure of laser resonators. Optics express. 2018. Vol. 26. No. 11. pp. 14433-14443.
Butko A.V., Butko V.Y., Lebedev S.P., Lebedev A.A., Davydov V.Y., Smirnov A.N., Eliseyev I.A., Dunaevskiy M., Kumzerov Y.A. State memory in solution gated epitaxial graphene. Applied Surface Science. 2018. Vol. 444. pp. 36-41.
Borodin B.R., Dunaevskiy M.S., Benimetckiy F.A., Lebedev S.P., Lebedev A.A., Alekseev P.A. Kelvin probe microscopy of MoSe 2 monolayers on graphene. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 8. pp. 081031.
Alekseev P.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Smirnov A.N., Kirilenko D.A., Davydov V.Y., Berkovits V.L. Unified mechanism of the surface Fermi level pinning in III-As nanowires. Nanotechnology. 2018. Vol. 29. No. 31. pp. 314003.
Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Lysak V.V., Cirlin G.E., Reznik R.R., Khrebtov A.I., Soshnikov I.P., Lahderanta E. Piezoelectric current generation in wurtzite GaAs nanowires. Physica Status Solidi (RRL)- Rapid Research Letters. 2018. Vol. 12. No. 1. pp. 1700358.
Alekseev P.A., Geydt P., Dunaevskiy M.S., Lahderanta E., Haggren T., Kakko J.P., Lipsanen H. I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide. Applied Physics Letters. 2017. Vol. 111. No. 13. pp. 132104.
Sharov V.A., Dunaevskiy M.S., Kryzhanovskaya N.V., Polubavkina Y.S., Alekseev P.A. Light absorption by an atomic force microscope probe. Journal of Physics: Conference Series. 2017. Vol. 816. No. 1. pp. 012036.
Dunaevskiy M.S., Geydt P., Lakhderanta E., Alekseev P., Haggren T., Kakko J., Jiang H., Lipsanen H. Young’s Modulus of Wurtzite and Zinc Blende InP Nanowires. Nano Letters. 2017. Vol. 17. No. 6. pp. 3441-3446.
Давыдов В.Ю., Усачев Д.Ю., Лебедев С.П., Смирнов А.Н., Левицкий В.С., Елисеев И.А., Алексеев П.А., Дунаевский М.С., Вилков О.Ю., Рыбкин А.Г., Лебедев А.А. Исследование кристаллической и электронной структуры графеновых пленок, выращенных на 6H-SIC (0001). Физика и техника полупроводников. 2017. Т. 51. № 8. С. 1116-1124.
Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Levitskii V.S., Eliseyev I.A., Alekseev P.A., Dunaevskiy M.S., Vilkov O.Y., Rybkin A.G., Lebedev A.A. Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). Semiconductors. 2017. Vol. 51. No. 8. pp. 1072-1080.
Alekseev P.A., Dunaevskiy M.S., Monakhov A.M., Dudelev V.V., Sokolovskii G.S., Teissier R., Baranov A.N. Spatial mode structure in a half-disk cavity laser. 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). 2017. pp. 1.
Alekseev P.A., Dunaevskiy M., Kirilenko D.A., Smirnov A.N., Davydov V.Y., Berkovits V.L. Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation. Journal of Applied Physics. 2017. Vol. 121. No. 7. pp. 074302.
Alekseev P.A., Dunaevskiy M.S., Monakhov A.M., Dudelev V.V., Sokolovskii G.S., Baranov A.N., Teissier R. AFM visualization of half-disk WGM laser modes. International Conference Laser Optics, LO 2016. 2016. pp. R320.
Geydt P., Dunaevskiy M.S., Alekseev A., Kakko J.P., Haggren T., Lahderanta E., Lipsanen H. Direct measurement of elastic modulus of InP nanowires with Scanning Probe Microscopy in PeakForce QNM mode. Journal of Physics: Conference Series. 2016. Vol. 769. No. 1. pp. 012029.
Geydt P., Alekseev P.A., Dunaevskiy M.S., Haggren T., Kakko J.P., Lahderanta E.M., Lipsanen H.K. Influence of surface passivation on electric properties of individual GaAs nanowires studied by current-voltage AFM measurements. Lithuanian Journal of Physics. 2016. Vol. 56. No. 2. pp. 92-101.
Dunaevskiy M.S., Alekseev P., Dontsov A., Monakhov A., Girard P., Arinero R., Teissier R., Baranov A. Apertureless SPM method of light detection. AIP Conference Proceedings. 2016. Vol. 1748. pp. 020002.
Alekseev P.A., Dunaevskii M.S., Ulin V.P., Lvova T.V., Filatov D.O., Nezhdanov A.V., Mashin A.I., Berkovits V.L. Nitride surface passivation of GaAs nanowires: Impact on surface state density. Nano Letters. 2015. Vol. 15. No. 1. pp. 63-68.
Alekseev P.A., Dunaevskii M.S., Slipchenko S.O., Podoskin A.A., Tarasov I.S. Mapping of laser diode radiation intensity by atomic-force microscopy. Technical Physics Letters. 2015. Vol. 41. No. 9. pp. 870-873.
Dunaevskiy M., Dontsov A., Alekseev P., Monakhov A., Baranov A., Arinero R., Teissier R., Titkov A. Apertureless scanning microscope probe as a detector of semiconductor laser emission. Applied Physics Letters. 2015. Vol. 106. No. 17. pp. 171105.
Dement'Ev P.A., Alekseev P.A., Dunaevskii M.S., Aleshin A.N. Behavior of charges in the active zone of composite OFET under the source-drain electric field. Journal of Physics: Conference Series. 2015. Vol. 661. No. 1. pp. 012029.
Geydt P., Alekseev P., Dunaevskiy M., Lahderanta E., Haggren T., Kakko J.P., Lipsanen H.K. Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope. Journal of Physics: Conference Series. 2015. Vol. 661. No. 1. pp. 012031.
Dement'Ev P.A., Dunaevskii M.S., Aleshin A.N., Titkov A.N., Makarenko I.V. Charge carrier accumulation and relaxation effects in the active region of polymer and composite (polymer-gold nanoparticles) field-effect transistor structures. Physics of the Solid State. 2014. Vol. 56. No. 5. pp. 1054-1057.
Gushchina E.V., Dunaevskii M.S., Alekseev P.A., Ozben E., Makarenko I.V., Titkov A.N. Behavior of charges locally injected into nanothin high-k SmScO3 dielectric. Technical Physics. 2014. Vol. 59. No. 10. pp. 1540-1544.
Alekseev P.A., Dunaevskii M.S., Gushchina E.V., Ozben E., Lahderanta E., Titkov A.N. Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate. Technical Physics Letters. 2013. Vol. 39. No. 5. pp. 427-430.
Dunaevskii M.S., Alekseev P., Monakhov A., Titkov A., Baranov A., Teissier R., Arinero R., Girard P. Near field imaging of a semiconductor laser by scanning probe microscopy without a photodetector. Applied Physics Letters. 2013. Vol. 103. No. 5. pp. 053120.
Dunaevskii M.S., Alekseev P.A., Lepsa M., Grutzmacher D., Titkov A.N. Charge accumulation on the surface of GaAs nanowires near the Schottky contact. Technical Physics Letters. 2013. Vol. 39. No. 2. pp. 209-212.
Alekseev P.A., Dunaevskii M.S., Stovpyaga A.V., Lepsa M., Titkov A.N. Measurement of Young's modulus of GaAs nanowires growing obliquely on a substrate. Semiconductors. 2012. Vol. 46. No. 5. pp. 641-646.
Dunaevskii M.S., Alekseev P., Girard P., Lashkul A., Lahderanta E., Titkov A. Analysis of the lateral resolution of electrostatic force gradient microscopy. Journal of Applied Physics. 2012. Vol. 112. No. 6. pp. 064112.
Dunaevskii M.S., Alekseev P., Girard P., Lahderanta E., Lashkul A., Titkov A. Kelvin probe force gradient microscopy of charge dissipation in nano thin dielectric layers. Journal of Applied Physics. 2011. Vol. 110. No. 8. pp. 084304.
Dunaevskii M.S., Nikolaeva M., Ionov A. On the effect of polymer film switching into a high-conductivity state during metal electrode melting. Technical Physics. 2010. Vol. 55. No. 1. pp. 144-146.
Dunaevskii M.S., Dement'Ev P.A., Samsonenko Y.B., Cirlin G.E., Titkov A.N. Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer. Semiconductors. 2010. Vol. 44. No. 5. pp. 610-615.
Dunaevskii M.S., Kunitsyna E., Lvova T.V., Terent'Ev Y., Semenov A., Solov'Ev V., Meltser B., Ivanov S.V., Yakovlev Y.P. Wet sulfur passivation of GaSb(100) surface for optoelectronic applications. Applied Surface Science. 2010. Vol. 256. No. 18. pp. 5644-5649.
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