Дунаевский Михаил Сергеевич

Статья

Ankudinov A., Dunaevskiy M., Khalisov M., Khrapova E., Krasilin A. Atomic force microscopy bending tests of a suspended rod-shaped object: Accounting for object fixing conditions. Physical Review E. 2023. Vol. 107. No. 2. pp. 025005.

Статья

Dunaevskiy M. The study of the triboelectric potential in h-BN and MoS2 thin layers. Ferroelectrics. 2023. Vol. 604. No. 1. pp. 8-13.

Статья

Alekseev P.A., Borodin B.R., Geydt P., Khayrudinov V., Bespalova K., Kirilenko D.A., Reznik R.R., Nashchekin A.V., Haggren T., Lahderanta E., Cirlin G.E., Lipsanen H., Dunaevskiy M.S. Effect of crystal structure on the Young’s modulus of GaP nanowires. Nanotechnology. 2021. Vol. 32. No. 38. pp. 385706.

Статья

Borodin B.R., Benimetckiy F.A., Dunaevskiy M.S., Alekseev P.A. Anisotropy of local anodic oxidation process in thin MoSe2 films. Journal of Physics: Conference Series. 2020. Vol. 1697. No. 1. pp. 012096.

Статья

Alekseev P.A., Sharov V.A., Borodin B.R., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. Effect of the uniaxial compression on the GaAs nanowire solar cell. Micromachines. 2020. Vol. 11. No. 6. pp. 581.

Статья

Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Kirilenko D.A., Ilkiv I.V., Reznik R.R., Cirlin G.E., Berkovits V.L. Control of Conductivity of In(x)G(a1-x)As Nanowires by Applied Tension and Surface States. Nano Letters. 2019. Vol. 19. No. 7. pp. 4463-4469.

Статья

Sharov V.A., Alekseev P.A., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. Triboelectric current generation in InP. Journal of Physics: Conference Series. 2019. Vol. 1400. No. 6. pp. 066055.

Статья

Borodin B.R., Benimetskiy F.A., Dunaevskiy M., Sharov V.A., Smirnov A.N., Davydov V.Y., Lahderanta E., Lebedev S.P., Lebedev A.A., Alekseev P.A. MoSe2/graphene/6H-SiC heterojunctions: energy band diagram and photodegradation. Semiconductor Science and Technology. 2019. Vol. 34. No. 12. pp. 105794.R1.

Статья

Borodin B.R., Alekseev P.A., Dunaevskiy M.S., Khayrudinov V., Lipsanen H. Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy. Journal of Physics: Conference Series. 2019. Vol. 1410. No. 1. pp. 012228.

Статья

Sharov V.A., Alekseev P.A., Borodin B.R., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. InP/Si Heterostructure for High-Current Hybrid Triboelectric/Photovoltaic Generation. ACS Applied Energy Materials. 2019. Vol. 2. No. 6. pp. 4395-4401.

Статья

Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Lysak V.V., Cirlin G.E., Reznik R.R., Khrebtov A.I., Soshnikov I.P., Lahderanta E. Piezoelectric current generation in wurtzite GaAs nanowires. Physica Status Solidi (RRL)- Rapid Research Letters. 2018. Vol. 12. No. 1. pp. 1700358.

Статья

Alekseev P.A., Dunaevskiy M.S., Monakhov A.M., Dudelev V.V., Sokolovskii G.S., Arinero R., Teissier R., Baranov A.N. Half-disk laser: Insight into the internal mode structure of laser resonators. Optics express. 2018. Vol. 26. No. 11. pp. 14433-14443.

Статья

Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Soshnikov I.P., Reznik R.R., Lisak V., Lahderanta E., Cirlin G.E. GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells. Semiconductors. 2018. Vol. 52. No. 5. pp. 609-611.

Статья

Butko A.V., Butko V.Y., Lebedev S.P., Lebedev A.A., Davydov V.Y., Smirnov A.N., Eliseyev I.A., Dunaevskiy M., Kumzerov Y.A. State memory in solution gated epitaxial graphene. Applied Surface Science. 2018. Vol. 444. pp. 36-41.

Статья

Borodin B.R., Dunaevskiy M.S., Benimetckiy F.A., Lebedev S.P., Lebedev A.A., Alekseev P.A. Kelvin probe microscopy of MoSe 2 monolayers on graphene. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 8. pp. 081031.

Статья

Алексеев П.А., Бородин Б.Р., Дунаевский М.С., Смирнов А.Н., Лебедев С.П., Лебедев А.А. Локальное анодное окисление слоев графена на SIC. Письма в Журнал технической физики. 2018. Т. 44. № 9. С. 34-40.

Статья

Алексеев П.А., Дунаевский М.С., Михайлов А.О., Лебедев С.П., Лебедев А.А., Илькив И.В., Хребтов А.И., Буравлев А.Д., Цырлин Г.Э. Электрические свойства gaas нитевидных нанокристаллов, выращенных на гибридных подложках графен/sic. Физика и техника полупроводников. 2018. Т. 52. № 12. С. 1507-1511.

Статья

Dunaevskiy M.S., Alekseev P.A., Monahov A.M., Sokolovskii G.S., Baranov A.N., Teissier R. Visualization of spatial structure of optical modes in half-disk lasers. Journal of Physics: Conference Series. 2018. Vol. 1092. No. 1. pp. 012027.

Статья

Alekseev P.A., Borodin B.R., Benimetskiy F.A., Smirnov A.N., Davydov V.Y., Lebedev S.P., Lebedev A.A., Dunaevskiy M.S. Optical and electrical properties of the MoSe2/graphene heterostructures. Journal of Physics: Conference Series. 2018. Vol. 1092. No. 1. pp. 012002.

Статья

Lebedev A.A., Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Levitskii V.S., Eliseyev I.A., Alekseev P.A., Dunaevskiy M.S., Rybkin A.G., Novikov S.V., Makarov Y.N. Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method. Journal of Physics: Conference Series. 2018. Vol. 951. No. 1. pp. 012007.

Статья

Alekseev P.A., Borodin B.R., Dunaevskii M.S., Smirnov A.N., Davydov V.Y., Lebedev S.P., Lebedev A.A. Local Anodic Oxidation of Graphene Layers on SiC. Technical Physics Letters. 2018. Vol. 44. No. 5. pp. 381-383.

Статья

Alekseev P.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Smirnov A.N., Kirilenko D.A., Davydov V.Y., Berkovits V.L. Unified mechanism of the surface Fermi level pinning in III-As nanowires. Nanotechnology. 2018. Vol. 29. No. 31. pp. 314003.

Статья

Lebedev A.A., Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Eliseyev I.A., Dunaevskiy M.S., Gushchina E.V., Bokai K., Pezoldt J. High Quality Graphene Grown by Sublimation on 4H-SiC (0001). Semiconductors. 2018. Vol. 52. No. 14. pp. 1882-1885.

Статья

Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Berkovits V.L. Electromechanical Switch Based on InxGa1-xAs Nanowires. Semiconductors. 2018. Vol. 52. No. 14. pp. 1833-1835.

Статья

Alekseev P.A., Dunaevskiy M.S., Monakhov A.M., Dudelev V.V., Sokolovskii G.S., Teissier R., Baranov A.N. Spatial mode structure in a half-disk cavity laser. 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). 2017. pp. 1.

Статья

Sharov V.A., Dunaevskiy M.S., Kryzhanovskaya N.V., Polubavkina Y.S., Alekseev P.A. Light absorption by an atomic force microscope probe. Journal of Physics: Conference Series. 2017. Vol. 816. No. 1. pp. 012036.

Статья

Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Levitskii V.S., Eliseyev I.A., Alekseev P.A., Dunaevskiy M.S., Vilkov O.Y., Rybkin A.G., Lebedev A.A. Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). Semiconductors. 2017. Vol. 51. No. 8. pp. 1072-1080.

Статья

Давыдов В.Ю., Усачев Д.Ю., Лебедев С.П., Смирнов А.Н., Левицкий В.С., Елисеев И.А., Алексеев П.А., Дунаевский М.С., Вилков О.Ю., Рыбкин А.Г., Лебедев А.А. Исследование кристаллической и электронной структуры графеновых пленок, выращенных на 6H-SIC (0001). Физика и техника полупроводников. 2017. Т. 51. № 8. С. 1116-1124.

Статья

Dunaevskiy M.S., Geydt P., Lakhderanta E., Alekseev P., Haggren T., Kakko J., Jiang H., Lipsanen H. Young’s Modulus of Wurtzite and Zinc Blende InP Nanowires. Nano Letters. 2017. Vol. 17. No. 6. pp. 3441-3446.

Статья

Alekseev P.A., Dunaevskiy M., Kirilenko D.A., Smirnov A.N., Davydov V.Y., Berkovits V.L. Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation. Journal of Applied Physics. 2017. Vol. 121. No. 7. pp. 074302.

Статья

Alekseev P.A., Geydt P., Dunaevskiy M.S., Lahderanta E., Haggren T., Kakko J.P., Lipsanen H. I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide. Applied Physics Letters. 2017. Vol. 111. No. 13. pp. 132104.

Статья

Geydt P., Dunaevskiy M.S., Alekseev A., Kakko J.P., Haggren T., Lahderanta E., Lipsanen H. Direct measurement of elastic modulus of InP nanowires with Scanning Probe Microscopy in PeakForce QNM mode. Journal of Physics: Conference Series. 2016. Vol. 769. No. 1. pp. 012029.

Статья

Geydt P., Alekseev P.A., Dunaevskiy M.S., Haggren T., Kakko J.P., Lahderanta E.M., Lipsanen H.K. Influence of surface passivation on electric properties of individual GaAs nanowires studied by current-voltage AFM measurements. Lithuanian Journal of Physics. 2016. Vol. 56. No. 2. pp. 92-101.

Статья

Dunaevskiy M.S., Alekseev P., Dontsov A., Monakhov A., Girard P., Arinero R., Teissier R., Baranov A. Apertureless SPM method of light detection. AIP Conference Proceedings. 2016. Vol. 1748. pp. 020002.

Статья

Alekseev P.A., Dunaevskiy M.S., Monakhov A.M., Dudelev V.V., Sokolovskii G.S., Baranov A.N., Teissier R. AFM visualization of half-disk WGM laser modes. International Conference Laser Optics, LO 2016. 2016. pp. R320.

Статья

Dunaevskiy M., Dontsov A., Alekseev P., Monakhov A., Baranov A., Arinero R., Teissier R., Titkov A. Apertureless scanning microscope probe as a detector of semiconductor laser emission. Applied Physics Letters. 2015. Vol. 106. No. 17. pp. 171105.

Статья

Alekseev P.A., Dunaevskii M.S., Ulin V.P., Lvova T.V., Filatov D.O., Nezhdanov A.V., Mashin A.I., Berkovits V.L. Nitride surface passivation of GaAs nanowires: Impact on surface state density. Nano Letters. 2015. Vol. 15. No. 1. pp. 63-68.

Статья

Geydt P., Alekseev P., Dunaevskiy M., Lahderanta E., Haggren T., Kakko J.P., Lipsanen H.K. Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope. Journal of Physics: Conference Series. 2015. Vol. 661. No. 1. pp. 012031.

Статья

Alekseev P.A., Dunaevskii M.S., Slipchenko S.O., Podoskin A.A., Tarasov I.S. Mapping of laser diode radiation intensity by atomic-force microscopy. Technical Physics Letters. 2015. Vol. 41. No. 9. pp. 870-873.

Статья

Dement'Ev P.A., Alekseev P.A., Dunaevskii M.S., Aleshin A.N. Behavior of charges in the active zone of composite OFET under the source-drain electric field. Journal of Physics: Conference Series. 2015. Vol. 661. No. 1. pp. 012029.

Статья

Dement'Ev P.A., Dunaevskii M.S., Aleshin A.N., Titkov A.N., Makarenko I.V. Charge carrier accumulation and relaxation effects in the active region of polymer and composite (polymer-gold nanoparticles) field-effect transistor structures. Physics of the Solid State. 2014. Vol. 56. No. 5. pp. 1054-1057.

Статья

Gushchina E.V., Dunaevskii M.S., Alekseev P.A., Ozben E., Makarenko I.V., Titkov A.N. Behavior of charges locally injected into nanothin high-k SmScO3 dielectric. Technical Physics. 2014. Vol. 59. No. 10. pp. 1540-1544.

Статья

Dunaevskii M.S., Alekseev P., Monakhov A., Titkov A., Baranov A., Teissier R., Arinero R., Girard P. Near field imaging of a semiconductor laser by scanning probe microscopy without a photodetector. Applied Physics Letters. 2013. Vol. 103. No. 5. pp. 053120.

Статья

Alekseev P.A., Dunaevskii M.S., Gushchina E.V., Ozben E., Lahderanta E., Titkov A.N. Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate. Technical Physics Letters. 2013. Vol. 39. No. 5. pp. 427-430.

Статья

Dunaevskii M.S., Alekseev P.A., Lepsa M., Grutzmacher D., Titkov A.N. Charge accumulation on the surface of GaAs nanowires near the Schottky contact. Technical Physics Letters. 2013. Vol. 39. No. 2. pp. 209-212.

Статья

Dunaevskii M.S., Alekseev P., Girard P., Lashkul A., Lahderanta E., Titkov A. Analysis of the lateral resolution of electrostatic force gradient microscopy. Journal of Applied Physics. 2012. Vol. 112. No. 6. pp. 064112.

Статья

Alekseev P.A., Dunaevskii M.S., Stovpyaga A.V., Lepsa M., Titkov A.N. Measurement of Young's modulus of GaAs nanowires growing obliquely on a substrate. Semiconductors. 2012. Vol. 46. No. 5. pp. 641-646.

Статья

Dunaevskii M.S., Alekseev P., Girard P., Lahderanta E., Lashkul A., Titkov A. Kelvin probe force gradient microscopy of charge dissipation in nano thin dielectric layers. Journal of Applied Physics. 2011. Vol. 110. No. 8. pp. 084304.

Статья

Dunaevskii M.S., Dement'Ev P.A., Samsonenko Y.B., Cirlin G.E., Titkov A.N. Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer. Semiconductors. 2010. Vol. 44. No. 5. pp. 610-615.

Статья

Dunaevskii M.S., Kunitsyna E., Lvova T.V., Terent'Ev Y., Semenov A., Solov'Ev V., Meltser B., Ivanov S.V., Yakovlev Y.P. Wet sulfur passivation of GaSb(100) surface for optoelectronic applications. Applied Surface Science. 2010. Vol. 256. No. 18. pp. 5644-5649.

Статья

Dunaevskii M.S., Nikolaeva M., Ionov A. On the effect of polymer film switching into a high-conductivity state during metal electrode melting. Technical Physics. 2010. Vol. 55. No. 1. pp. 144-146.