Kondratev V., Morozov I.A., Vyacheslavova E., Gudovskikh A.S., Nalimova S.S., Moshnikov V., Bolshakov A.D. Silicon nanowires based adsorption sensors for CO and NH3 detection. Journal of Physics: Conference Series. 2021. Vol. 2103. No. 1. pp. 012229.
Fedorov V.V., Berdnikov Y., Sibirev N.V., Bolshakov A.D., Fedina S., Sapunov G.A., Dvoretckaia L.N., Cirlin G.E., Kirilenko D., Tchernycheva M., Mukhin I.S. Tailoring morphology and vertical yield of self-catalyzed gap nanowires on template-free si substrates. Nanomaterials. 2021. Vol. 11. No. 8. pp. 1949.
Bolshakov A.D., Shishkin I., Machnev A., Petrov M. Single GaP nanowire nonlinear characterization with the aid of an optical trap. Nanoscale. 2021. pp. in press.
Koval O.Y., Fedorov V.V., Bolshakov A.D., Eliseev I., Fedina S.V., Sapunov G.A., Udovenko S., Dvoretckaia L.N., Kirilenko D.A., Burkovsky R., Mukhin I.S. Xrd evaluation of wurtzite phase in mbe grown self-catalyzed gap nanowires. Nanomaterials. 2021. Vol. 11. No. 4. pp. 960.
Roy P., Bolshakov A.D. A Highly Directive Ultraviolet Plasmonic “Antenna-on-Reflector” for Single-Molecule Detection. Physica Status Solidi (RRL)- Rapid Research Letters. 2021. Vol. 15. No. 6. pp. 2000579.
Sharov V., Alekseev P.A., Fedorov V.V., Nestoklon M., Ankudinov A.V., Kirilenko D., Sapunov G., Koval O.Y., Cirlin G.E., Bolshakov A.D., Mukhin I.S. Work function tailoring in gallium phosphide nanowires. Applied Surface Science. 2021. Vol. 563. pp. 150018.
Kuznetsov A.S., Bolshakov A.D., Cirlin G.E. Investigation of GaP Based Nanowires Optical Properties for Lasing Applications. Proceedings of the 2021 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering, ElConRus 2021. 2021. pp. 1325-1328.
Fedorov V.V., Bolshakov A.D., Koval O., Sapunov G.A., Sobolev M.S., Pirogov E.V., Kirilenko D., Mozharov A.M., Mukhin I.S. Controllable antiphase domain density in dilute nitride GaPN/GaP heterostructures on silicon. Journal of Physics: Conference Series. 2020. Vol. 1461. No. 1. pp. 012039.
Koval O.Y., Fedorov V.V., Bolshakov A.D., Fedina S.V., Kochetkov F.M., Neplokh V., Sapunov G.A., Dvoretckaia L.N., Kirilenko D.A., Shtrom I.V., Islamova R.M., Cirlin G.E., Tchernycheva M., Serov A.Y., Mukhin I.S. Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane. Nanomaterials. 2020. Vol. 10. No. 11. pp. 2110.
Sibirev N. V. ., Fedorov V.V., Kirilenko D., Ubiivovk E.V., Berdnikov Y.S., Bolshakov A.D., Mukhin I.S. Study of wurtzite crystal phase stabilization in heterostructured Ga(As,P) nanowires. Nanostructures: Physics and Technology: 28th International Symposium. 2020. pp. 96-97.
Mitin D.M., Bolshakov A.D., Neplokh V.V., Mozharov A.M., Raudik S.A., Fedorov V.V., Shugurov K.Y., Mikhailovskii V.Y., Rajanna P.M., Fedorov F.S., Nasibulin A.G., Mukhin I.S. Novel design strategy for GaAs-based solar cell by application of single-walled carbon nanotubes topmost layer. Energy Science and Engineering. 2020. Vol. 8. No. 8. pp. 2938-2945.
Sharov V.A., Bolshakov A.D., Fedorov V.V., Bruyere S., Cirlin G.E., Alekseev P.A., Mukhin I.S. Deep-Subwavelength Raman Imaging of the Strained GaP Nanowires. Journal of Physical Chemistry C. 2020. Vol. 124. No. 25. pp. 14054-14060.
Roy P., Bolshakov A.D. Temperature-controlled switching of plasmonic response in gallium core-shell nanoparticles. Journal of Physics D: Applied Physics. 2020. Vol. 53. No. 46. pp. 465303.
Dvoretckaia L.N., Bolshakov A.D., Mozharov A.M., Sobolev M.S., Kirilenko D.A., Baranov A.I., Mikhailovskii V.Y., Neplokh V.V., Morozov I.A., Fedorov V.V., Mukhin I.S. GaNP-based photovoltaic device integrated on Si substrate. Solar Energy Materials and Solar Cells. 2020. Vol. 206. pp. 110282.
Sapunov G.A., Fedorov V.V., Koval O.Y., Sharov V.A., Dvoretckaia L.N., Mukhin I.S., Bolshakov A.D. Synthesis and Optical Characterization of GaAs Epitaxial Nanoparticles on Silicon. Crystal Growth and Design. 2020. Vol. 20. No. 1. pp. 300-306.
Berdnikov Y.S., Neplokh V., Fedorov V.V., Bolshakov A.D., Mikhailovskii V.Y., Mitin D., Nasibulin A.G., Islamova R.M., Cirlin G.E., Mukhin I.S., Dubrovskii V.G. Flexible suspended membranes of GaP nanowires. Proceedings - International Conference Laser Optics 2020, ICLO 2020. 2020. pp. 9285737.
Kochetkov F.M., Neplokh V., Fedorov V.V., Bolshakov A.D., Sharov V.A., Eliseev I.E., Tchernycheva M., Cirlin G.E., Nasibulin A.G., Islamova R.M., Mukhin I.S. Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices. Nanotechnology. 2020. Vol. 31. No. 46. pp. 46LT01.
Sibirev N.V., Fedorov V.V., Shtrom I.V., Bolshakov A.D., Berdnikov Y. Control of (Al,Ga)P composition in self-catalyzed nanowire growth. Физика и механика материалов = Materials Physics and Mechanics. 2020. Vol. 44. No. 3. pp. 316-323.
Sharov V.A., Bolshakov A.D., Fedorov V.V., Mukhin I.S. Raman spectroscopy of strained GaP nanowires. Journal of Physics: Conference Series. 2020. Vol. 1695. No. 1. pp. 012102.
Sibirev N.V., Fedorov V.V., Kirilenko D.A., Ubiyvovk E.V., Berdnikov Y.S., Bolshakov A.D., Mukhin I.S. Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) Nanowires. Semiconductors. 2020. Vol. 54. No. 14. pp. 1862-1865.
Trofimov P., Pushkarev A.P., Sinev I., Fedorov V.V., Bruyere S., Bolshakov A.D., Mukhin I.S., Makarov S.V. Perovskite-Gallium Phosphide Platform for Reconfigurable Visible-Light Nanophotonic Chip. ACS Nano. 2020. Vol. 14. No. 7. pp. 8126-8134.
Shugurov K.Y., Mozharov A.M., Bolshakov A.D., Fedorov V.V., Sapunov G.A., Shtrom I.V., Uvarov A.V., Kudryashov D.A., Baranov A., Mikhailovskii V.Y., Neplokh V.V., Tchernycheva M., Cirlin G.E., Mukhin I.S. Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface. Nanotechnology. 2020. Vol. 31. No. 24. pp. 244003.
Lebedev D.V., Mozharov A.M., Bolshakov A.D., Shkoldin V.A., Permyakov D.V., Golubok A.O., Samusev A.K., Mukhin I.S. Indirect Detection of the Light Emission in the Local Tunnel Junction. Physica Status Solidi (RRL)- Rapid Research Letters. 2020. Vol. 14. No. 3. pp. 1900607.
Neplokh V.V., Kochetkov F.M., Deriabin K.V., Fedorov V.V., Bolshakov A.D., Eliseev I., Mikhailovskii V.Y., Ilatovskii D.A., Krasnikov D.V., Tchernycheva M., Cirlin G.E., Nasibulin A.G., Mukhin I.S., Islamova R.M. Modified silicone rubber for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with a single-walled carbon nanotube transparent contact. Journal of Materials Chemistry C. 2020. Vol. 8. No. 11. pp. 3764-3772.
Fedorov V.V., Bolshakov A.D., Sergaeva O.N., Neplokh V., Markina D.I., Bruyere S., Saerens G., Petrov M.I., Grange R., Timofeeva M., Makarov S.V., Mukhin I.S. Gallium Phosphide Nanowires in a Free-Standing, Flexible, and Semitransparent Membrane for Large-Scale Infrared-to-Visible Light Conversion. ACS Nano. 2020. Vol. 14. No. 8. pp. 10624–10632.
Roy P., Bolshakov A.D. Ga-GaP nanowire hybrid optical system for enhanced coupling, focusing and steering of light. Journal of Physics D: Applied Physics. 2020. Vol. 53. No. 29. pp. 295101.
Koval O., Fedorov V.V., Kryzhanovskaya N.V., Sapunov G.A., Kirilenko D., Pirogov E.V., Filosofov N.G., Serov A.Y., Shtrom I.V., Bolshakov A.D., Mukhin I.S. Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon. CrystEngComm. 2020. Vol. 22. No. 2. pp. 283-292.
Shugurov K.Y., Mozharov A.M., Bolshakov A.D., Fedorov V.V., Uvarov A.V., Kudryashov D.A., Mikhailovskii V.Y., Cirlin G.E., Mukhin I.S. GaN nanowires/ p-Si interface passivation by hydrogen plasma treatment. Journal of Physics: Conference Series. 2020. Vol. 1537. No. 1. pp. 012012.
Aglikov A.S., Kudryashov D.A., Mozharov A.M., Makarov S.V., Bolshakov A.D., Mukhin I.S. Peculiarities of Magnetron Sputtering of Nickel Oxide Thin Films for Use in Perovskite Solar Cells. Technical Physics. 2019. Vol. 64. No. 3. pp. 422-426.
Исследование эффектов объемной неустойчивости в одиночных GaN ННК в сильных электрических полях
Shkoldin V.A., Permyakov D.V., Ladutenko K.S., Zhukov M.V., Vasiliev A.A., Golubok A.O., Uskov A.V., Bolshakov A.D., Bogdanov A.A., Samusev A.K., Mukhin I.S. Crucial Role of Metal Surface Morphology in Photon Emission from a Tunnel Junction at Ambient Conditions. Journal of Physical Chemistry C. 2019. Vol. 123. No. 14. pp. 8813-8817.
Shkoldin V.A., Permyakov D.V., Ladutenko K.S., Zhukov M.V., Vasiliev A.A., Golubok A.O., Uskov A.V., Bolshakov A.D., Bogdanov A.A., Samusev A.K., Mukhin I.S. Investigation of the light emission in the local tunnel junction and its dependence on the contact surface morphology. Journal of Physics: Conference Series. 2019. Vol. 1199. No. 1. pp. 012005.
Bolshakov A.D., Fedorov V.V., Koval O.Y., Sapunov G.A., Sobolev M.S., Pirogov E.V., Kirilenko D.A., Mozharov A.M., Mukhin I.S. Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001). Crystal Growth and Design. 2019. Vol. 19. No. 8. pp. 4510-4520.
Shugurov K.Y., Mozharov A.M., Sapunov G.A., Fedorov V.V., Bolshakov A.D., Cirlin G.E., Mukhin I.S. GaN-nanowire/Si solar cell: Numerical modeling, fabrication and characterization. Journal of Physics: Conference Series. 2019. Vol. 1199. No. 1. pp. 012030.
Mitin D.M., Raudik S.A., Mozharov A.M., Bolshakov A.D., Fedorov V.V., Nepokh V.V., Rajanna P.M., Nasibulin A.G., Mukhin I.S. Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes. Semiconductors. 2019. Vol. 53. No. 14. pp. 1926-1928.
Raudik S.A., Mozharov A.M., Mitin D.M., Bolshakov A.D., Fedorov V.V., Neplokh V.V., Rajanna P.M., Nasibulin A.G., Mukhin I.S. AlGaAs/GaAs solar cell with CNT transport layer: Numerical simulation. Journal of Physics: Conference Series. 2019. Vol. 1410. No. 1. pp. 012107.
Dvoretckaia L.N., Mozharov A.M., Bolshakov A.D., Fedorov V.V., Vasiliev A.A., Mukhin I.S. Theoretical optimization of the photolithography through array of 1.2 Mu m silica microspheres. Journal of Physics: Conference Series. 2019. Vol. 1410. No. 1. pp. 012129.
Shugurov K.Y., Reznik R.R., Mozharov A.M., Kotlyar K.P., Koval O.Y., Osipov A.V., Fedorov V.V., Shtrom I.V., Bolshakov A.D., Kukushkin S.A., Mukhin I.S., Cirlin G.E. Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heterostructure. Materials Science in Semiconductor Processing. 2019. Vol. 90. pp. 20-25.
Sharov V.A., Bolshakov A.D., Fedorov V.V., Shugurov K.Y., Mozharov A.M., Sapunov G.A., Mukhin I.S. Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires. IOP Conference Series: Materials Science and Engineering. 2019. Vol. 699. No. 1. pp. 012047.
Bolshakov A.D., Fedorov V.V., Sibirev N.V., Fetisova M.V., Moiseev E.I., Kryzhanovskaya N.V., Koval O.Y., Ubyivovk E.V., Mozharov A.M., Cirlin G.E., Mukhin I.S. Growth and Characterization of GaP/GaPAs Nanowire Heterostructures with Controllable Composition. Physica Status Solidi (RRL)- Rapid Research Letters. 2019. Vol. 13. No. 11. pp. 1900350.
Mitin D.M., Raudik S.A., Mozharov A.M., Bolshakov A.D., Fedorov V.V., Nepokh V.V., Mikhailovskii V.Y., Rajanna P.M., Nasibulin A.G., Mukhin I.S. Current Distribution in GaAs Solar Cell with Carbon Nanotube Transport Layer. Journal of Physics: Conference Series. 2019. Vol. 1400. No. 6. pp. 066053.
Mukhin I.S., Zhukov M.V., Mozharov A.M., Bolshakov A.D., Golubok A.O. Influence of condensation enhancement effect on AFM image contrast inversion in hydrophilic nanocapillaries. Applied Surface Science. 2019. Vol. 471. pp. 621-626.
Агликов А.С., Кудряшов Д.А., Можаров А.М., Макаров С.В., Большаков А.Д., Мухин И.С. Особенности магнетронного напыления тонких пленок оксида никеля для применения в составе перовскитных солнечных элементов. Журнал технической физики. 2019. Т. 89. № 3. С. 460-464.
Bolshakov A.D., Fedorov V.V., Shugurov K.Y., Mozharov A.M., Sapunov G.A., Shtrom I.V., Mukhin M.S., Uvarov A.V., Cirlin G.E., Mukhin I.S. Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si. Nanotechnology. 2019. Vol. 30. No. 39. pp. 395602.
Mozharov A.M., Vasiliev A.A., Bolshakov A.D., Sapunov G.A., Fedorov V.V., Cirlin G.E., Mukhin I.S. Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential. Semiconductors. 2018. Vol. 52. No. 4. pp. 489-492.
Bolshakov A.D., Dvoretckaia L.N., Fedorov V.V., Sapunov G.A., Mozharov A.M., Shugurov K.Y., Shkoldin V.A., Mukhin M.S., Cirlin G.E., Mukhin I.S. Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires. Semiconductors. 2018. Vol. 52. No. 16. pp. 2088-2091.
Shugurov K.U., Mozharov A.M., Sapunov G.A., Fedorov V.V., Bolshakov A.D., Mukhin I.S. Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells. Journal of Physics: Conference Series. 2018. Vol. 993. No. 1. pp. 012034.
Bolshakov A.D., Mozharov A.M., Sapunov G.A., Shtrom I.V., Sibirev N.V., Fedorov V.V., Ubyivovk E.V., Tchernycheva M., Cirlin G.E., Mukhin I.S. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy. Beilstein Journal of Nanotechnology. 2018. Vol. 9. pp. 146-154.
Fedorov V.V., Bolshakov A.D., Dvoretckaia L.N., Sapunov G.A., Kirilenko D.A., Mozharov A.M., Shugurov K.Y., Shkoldin V.A., Cirlin G.E., Mukhin I.S. Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching. Semiconductors. 2018. Vol. 52. No. 16. pp. 2092-2095.
Bolshakov A.D., Fedorov V.V., Sapunov G.A., Mozharov A.M., Dvoretckaia L.N., Shugurov K.U., Shkoldin V.A., Shtrom I.V., Mukhin M.S., Cirlin G.E., Mukhin I.S. GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties. Journal of Physics: Conference Series. 2018. Vol. 1092. No. 1. pp. 012013.
Mozharov A.M., Vasiliev A.A., Komissarenko F.E., Bolshakov A.D., Sapunov G.A., Fedorov V.V., Cirlin G.E., Mukhin I.S. Effect of the Conductive Channel Cut-Off on Operation of n(+)-n-n(+) GaN NW-Based Gunn Diode. Semiconductors. 2018. Vol. 52. No. 14. pp. 1809-1812.
Dvoretckaia L.N., Mozharov A.M., Uskov A.V., Bolshakov A.D., Golubok A.O., Mukhin I.S. Effect of metallic nanoantennas on the efficiency of the surface plasmon-polariton generation via excitation of electromagnetic waves in a tunnel junction. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 7. pp. 071023.
Raudik S.A., Mozharov A.M., Mitin D.M., Bolshakov A.D., Rajanna P.M., Nasibulin A.G., Mukhin I.S. Numerical simulation of the carbon nanotubes transport layer influence on performance of GaAs solar cell. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 4. pp. 041040.
Aglikov A.S., Mozharov A.M., Kudryashov D.A., Sosnin D.V., Vasilev A.Y., Bolshakov A.D., Makarov S.V., Mukhin I.S. Investigation of the electrical and optical properties of nickel oxide films produced by RF magnetron sputtering method. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 4. pp. 041042.
Sapunov G.A., Fedorov V.V., Bolshakov A.D., Mozharov A.M., Dvoreckaia L.N., Kirilenko D.A., Sitnikova A.A., Mukhin I.S. GaN nanostructures grown on Si(111) by PA-MBE via droplet epitaxy: SEM and HRTEM study. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 2. pp. 022033.
Dvoretckaia L.N., Mozharov A.M., Fedorov V.V., Bolshakov A.D., Mukhin I.S. Fabrication method of the patterned mask for controllable growth of low-dimensional semiconductor nanostructures. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 2. pp. 022042.
Shugurov K.U., Mozharov A.M., Fedorov V.V., Bolshakov A.D., Sapunov G.A., Mukhin I.S. Influence of hydrogen plasma passivation on electrical and spectral characteristics of GaN nanowires / Si solar cells. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 4. pp. 041021.
Shkoldin V.A., Permyakov D.V., Zhukov M.V., Vasiliev A.A., Mamaeva T.A., Golubok A.O., Uskov A.V., Bolshakov A.D., Samusev A.K., Mukhin I.S. Influence of Au surface properties on photon emission from localized metal-insulator-metal tunnel contact. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 4. pp. 041018.
Fedorov V.V., Bolshakov A.D., Mozharov A.M., Sapunov G.A., Shtrom I.V., Kirilenko D.A., Sitnikova A.A., Mukhin I.S. Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon. Journal of Physics: Conference Series. 2017. Vol. 917. No. 3. pp. 032040.
Bolshakov A.D., Mozharov A.M., Sapunov G.A., Fedorov V.V., Dvoretckaia L.N., Mukhin I.S. Theoretical modeling of the self-catalyzed nanowire growth: nucleation- and adsorption-limited regimes. Materials Research Express. 2017. Vol. 4. No. 12. pp. 125027.
Mozharov A.M., Komissarenko F.E., Bolshakov A.D., Fedorov V.V., Sapunov G.A., Cirlin G.E., Mukhin I.S. Modeling the semiconductor devices with negative differential resistance based on nitride nanowires. Journal of Physics: Conference Series. 2017. Vol. 917. No. 8. pp. 082017.