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Большаков Алексей Дмитриевич

Большаков Алексей Дмитриевич

Должность: доцент (квалификационная категория "доцент практики")

Подразделение: физико-технический факультет

Уч. степень: кандидат физико-математических наук

Наименование направления подготовки и (или) специальности:

Преподаваемые дисциплины в текущем учебном году:

  • Технология полупроводников

Список трудов:

  1. Koval O., Fedorov V.V., Kryzhanovskaya N.V., Sapunov G.A., Kirilenko D., Pirogov E.V., Filosofov N.G., Serov A.Y., Shtrom I.V., Bolshakov A.D., Mukhin I.S. Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon. CrystEngComm. 2020. Vol. 22. No. 2. pp. 283-292. [Тип: Статья, Год: 2020]
  2. Shugurov K.Y., Mozharov A.M., Bolshakov A.D., Fedorov V.V., Sapunov G.A., Shtrom I.V., Uvarov A.V., Kudryashov D.A., Baranov A., Mikhailovskii V.Y., Neplokh V.V., Tchernycheva M., Cirlin G.E., Mukhin I.S. Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface. Nanotechnology. 2020. Vol. 31. No. 24. pp. 244003. [Тип: Статья, Год: 2020]
  3. Mitin D.M., Bolshakov A.D., Neplokh V.V., Mozharov A.M., Raudik S.A., Fedorov V.V., Shugurov K.Y., Mikhailovskii V.Y., Rajanna P.M., Fedorov F.S., Nasibulin A.G., Mukhin I.S. Novel design strategy for GaAs-based solar cell by application of single-walled carbon nanotubes topmost layer. Energy Science and Engineering. 2020. pp. in press. [Тип: Статья, Год: 2020]
  4. Sapunov G.A., Fedorov V.V., Koval O.Y., Sharov V.A., Dvoretckaia L.N., Mukhin I.S., Bolshakov A.D. Synthesis and Optical Characterization of GaAs Epitaxial Nanoparticles on Silicon. Crystal Growth and Design. 2020. Vol. 20. No. 1. pp. 300-306. [Тип: Статья, Год: 2020]
  5. Lebedev D.V., Mozharov A.M., Bolshakov A.D., Shkoldin V.A., Permyakov D.V., Golubok A.O., Samusev A.K., Mukhin I.S. Indirect Detection of the Light Emission in the Local Tunnel Junction. Physica Status Solidi (RRL)- Rapid Research Letters. 2020. Vol. 14. No. 3. pp. 1900607. [Тип: Статья, Год: 2020]
  6. Dvoretckaia L.N., Bolshakov A.D., Mozharov A.M., Sobolev M.S., Kirilenko D.A., Baranov A.I., Mikhailovskii V.Y., Neplokh V.V., Morozov I.A., Fedorov V.V., Mukhin I.S. GaNP-based photovoltaic device integrated on Si substrate. Solar Energy Materials and Solar Cells. 2020. Vol. 206. pp. 110282. [Тип: Статья, Год: 2020]
  7. Fedorov V.V., Bolshakov A.D., Koval O., Sapunov G.A., Sobolev M.S., Pirogov E.V., Kirilenko D., Mozharov A.M., Mukhin I.S. Controllable antiphase domain density in dilute nitride GaPN/GaP heterostructures on silicon. Journal of Physics: Conference Series. 2020. Vol. 1461. No. 1. pp. 012039. [Тип: Статья, Год: 2020]
  8. Neplokh V.V., Kochetkov F.M., Deriabin K.V., Fedorov V.V., Bolshakov A.D., Eliseev I., Mikhailovskii V.Y., Ilatovskii D.A., Krasnikov D.V., Tchernycheva M., Cirlin G.E., Nasibulin A.G., Mukhin I.S., Islamova R.M. Modified silicone rubber for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with a single-walled carbon nanotube transparent contact. Journal of Materials Chemistry C. 2020. Vol. 8. No. 11. pp. 3764-3772. [Тип: Статья, Год: 2020]
  9. Агликов А.С., Кудряшов Д.А., Можаров А.М., Макаров С.В., Большаков А.Д., Мухин И.С. Особенности магнетронного напыления тонких пленок оксида никеля для применения в составе перовскитных солнечных элементов. Журнал технической физики. 2019. Т. 89. № 3. С. 460-464. [Тип: Статья, Год: 2019]
  10. Aglikov A.S., Kudryashov D.A., Mozharov A.M., Makarov S.V., Bolshakov A.D., Mukhin I.S. Peculiarities of Magnetron Sputtering of Nickel Oxide Thin Films for Use in Perovskite Solar Cells. Technical Physics. 2019. Vol. 64. No. 3. pp. 422-426. [Тип: Статья, Год: 2019]
  11. Shkoldin V.A., Permyakov D.V., Ladutenko K.S., Zhukov M.V., Vasiliev A.A., Golubok A.O., Uskov A.V., Bolshakov A.D., Bogdanov A.A., Samusev A.K., Mukhin I.S. Investigation of the light emission in the local tunnel junction and its dependence on the contact surface morphology. Journal of Physics: Conference Series. 2019. Vol. 1199. No. 1. pp. 012005. [Тип: Статья, Год: 2019]
  12. Bolshakov A.D., Fedorov V.V., Sibirev N.V., Fetisova M.V., Moiseev E.I., Kryzhanovskaya N.V., Koval O.Y., Ubyivovk E.V., Mozharov A.M., Cirlin G.E., Mukhin I.S. Growth and Characterization of GaP/GaPAs Nanowire Heterostructures with Controllable Composition. Physica Status Solidi (RRL)- Rapid Research Letters. 2019. Vol. 13. No. 11. pp. 1900350. [Тип: Статья, Год: 2019]
  13. Bolshakov A.D., Fedorov V.V., Koval O.Y., Sapunov G.A., Sobolev M.S., Pirogov E.V., Kirilenko D.A., Mozharov A.M., Mukhin I.S. Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001). Crystal Growth and Design. 2019. Vol. 19. No. 8. pp. 4510-4520. [Тип: Статья, Год: 2019]
  14. Shugurov K.Y., Mozharov A.M., Sapunov G.A., Fedorov V.V., Bolshakov A.D., Cirlin G.E., Mukhin I.S. GaN-nanowire/Si solar cell: Numerical modeling, fabrication and characterization. Journal of Physics: Conference Series. 2019. Vol. 1199. No. 1. pp. 012030. [Тип: Статья, Год: 2019]
  15. Bolshakov A.D., Fedorov V.V., Shugurov K.Y., Mozharov A.M., Sapunov G.A., Shtrom I.V., Mukhin M.S., Uvarov A.V., Cirlin G.E., Mukhin I.S. Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si. Nanotechnology. 2019. Vol. 30. No. 39. pp. 395602. [Тип: Статья, Год: 2019]
  16. Mukhin I.S., Zhukov M.V., Mozharov A.M., Bolshakov A.D., Golubok A.O. Influence of condensation enhancement effect on AFM image contrast inversion in hydrophilic nanocapillaries. Applied Surface Science. 2019. Vol. 471. pp. 621-626. [Тип: Статья, Год: 2019]
  17. Raudik S.A., Mozharov A.M., Mitin D.M., Bolshakov A.D., Fedorov V.V., Neplokh V.V., Rajanna P.M., Nasibulin A.G., Mukhin I.S. AlGaAs/GaAs solar cell with CNT transport layer: Numerical simulation. Journal of Physics: Conference Series. 2019. Vol. 1410. No. 1. pp. 012107. [Тип: Статья, Год: 2019]
  18. Dvoretckaia L.N., Mozharov A.M., Bolshakov A.D., Fedorov V.V., Vasiliev A.A., Mukhin I.S. Theoretical optimization of the photolithography through array of 1.2 Mu m silica microspheres. Journal of Physics: Conference Series. 2019. Vol. 1410. No. 1. pp. 012129. [Тип: Статья, Год: 2019]
  19. Shugurov K.Y., Reznik R.R., Mozharov A.M., Kotlyar K.P., Koval O.Y., Osipov A.V., Fedorov V.V., Shtrom I.V., Bolshakov A.D., Kukushkin S.A., Mukhin I.S., Cirlin G.E. Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heterostructure. Materials Science in Semiconductor Processing. 2019. Vol. 90. pp. 20-25. [Тип: Статья, Год: 2019]
  20. Shkoldin V.A., Permyakov D.V., Ladutenko K.S., Zhukov M.V., Vasiliev A.A., Golubok A.O., Uskov A.V., Bolshakov A.D., Bogdanov A.A., Samusev A.K., Mukhin I.S. Crucial Role of Metal Surface Morphology in Photon Emission from a Tunnel Junction at Ambient Conditions. Journal of Physical Chemistry C. 2019. Vol. 123. No. 14. pp. 8813-8817. [Тип: Статья, Год: 2019]
  21. Mitin D.M., Raudik S.A., Mozharov A.M., Bolshakov A.D., Fedorov V.V., Nepokh V.V., Rajanna P.M., Nasibulin A.G., Mukhin I.S. Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes. Semiconductors. 2019. Vol. 53. No. 14. pp. 1926-1928. [Тип: Статья, Год: 2019]
  22. Mitin D.M., Raudik S.A., Mozharov A.M., Bolshakov A.D., Fedorov V.V., Nepokh V.V., Mikhailovskii V.Y., Rajanna P.M., Nasibulin A.G., Mukhin I.S. Current Distribution in GaAs Solar Cell with Carbon Nanotube Transport Layer. Journal of Physics: Conference Series. 2019. Vol. 1400. No. 6. pp. 066053. [Тип: Статья, Год: 2019]
  23. Dvoretckaia L.N., Mozharov A.M., Uskov A.V., Bolshakov A.D., Golubok A.O., Mukhin I.S. Effect of metallic nanoantennas on the efficiency of the surface plasmon-polariton generation via excitation of electromagnetic waves in a tunnel junction. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 7. pp. 071023. [Тип: Статья, Год: 2018]
  24. Dvoretckaia L.N., Mozharov A.M., Fedorov V.V., Bolshakov A.D., Mukhin I.S. Fabrication method of the patterned mask for controllable growth of low-dimensional semiconductor nanostructures. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 2. pp. 022042. [Тип: Статья, Год: 2018]
  25. Mozharov A.M., Vasiliev A.A., Bolshakov A.D., Sapunov G.A., Fedorov V.V., Cirlin G.E., Mukhin I.S. Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential. Semiconductors. 2018. Vol. 52. No. 4. pp. 489-492. [Тип: Статья, Год: 2018]
  26. Sapunov G.A., Fedorov V.V., Bolshakov A.D., Mozharov A.M., Dvoreckaia L.N., Kirilenko D.A., Sitnikova A.A., Mukhin I.S. GaN nanostructures grown on Si(111) by PA-MBE via droplet epitaxy: SEM and HRTEM study. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 2. pp. 022033. [Тип: Статья, Год: 2018]
  27. Aglikov A.S., Mozharov A.M., Kudryashov D.A., Sosnin D.V., Vasilev A.Y., Bolshakov A.D., Makarov S.V., Mukhin I.S. Investigation of the electrical and optical properties of nickel oxide films produced by RF magnetron sputtering method. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 4. pp. 041042. [Тип: Статья, Год: 2018]
  28. Bolshakov A.D., Fedorov V.V., Sapunov G.A., Mozharov A.M., Dvoretckaia L.N., Shugurov K.U., Shkoldin V.A., Shtrom I.V., Mukhin M.S., Cirlin G.E., Mukhin I.S. GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties. Journal of Physics: Conference Series. 2018. Vol. 1092. No. 1. pp. 012013. [Тип: Статья, Год: 2018]
  29. Shugurov K.U., Mozharov A.M., Sapunov G.A., Fedorov V.V., Bolshakov A.D., Mukhin I.S. Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells. Journal of Physics: Conference Series. 2018. Vol. 993. No. 1. pp. 012034. [Тип: Статья, Год: 2018]
  30. Bolshakov A.D., Mozharov A.M., Sapunov G.A., Shtrom I.V., Sibirev N.V., Fedorov V.V., Ubyivovk E.V., Tchernycheva M., Cirlin G.E., Mukhin I.S. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy. Beilstein Journal of Nanotechnology. 2018. Vol. 9. pp. 146-154. [Тип: Статья, Год: 2018]
  31. Mozharov A.M., Vasiliev A.A., Komissarenko F.E., Bolshakov A.D., Sapunov G.A., Fedorov V.V., Cirlin G.E., Mukhin I.S. Effect of the Conductive Channel Cut-Off on Operation of n(+)-n-n(+) GaN NW-Based Gunn Diode. Semiconductors. 2018. Vol. 52. No. 14. pp. 1809-1812. [Тип: Статья, Год: 2018]
  32. Shkoldin V.A., Permyakov D.V., Zhukov M.V., Vasiliev A.A., Mamaeva T.A., Golubok A.O., Uskov A.V., Bolshakov A.D., Samusev A.K., Mukhin I.S. Influence of Au surface properties on photon emission from localized metal-insulator-metal tunnel contact. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 4. pp. 041018. [Тип: Статья, Год: 2018]
  33. Shugurov K.U., Mozharov A.M., Fedorov V.V., Bolshakov A.D., Sapunov G.A., Mukhin I.S. Influence of hydrogen plasma passivation on electrical and spectral characteristics of GaN nanowires / Si solar cells. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 4. pp. 041021. [Тип: Статья, Год: 2018]
  34. Raudik S.A., Mozharov A.M., Mitin D.M., Bolshakov A.D., Rajanna P.M., Nasibulin A.G., Mukhin I.S. Numerical simulation of the carbon nanotubes transport layer influence on performance of GaAs solar cell. Journal of Physics: Conference Series. 2018. Vol. 1124. No. 4. pp. 041040. [Тип: Статья, Год: 2018]
  35. Bolshakov A.D., Dvoretckaia L.N., Fedorov V.V., Sapunov G.A., Mozharov A.M., Shugurov K.Y., Shkoldin V.A., Mukhin M.S., Cirlin G.E., Mukhin I.S. Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires. Semiconductors. 2018. Vol. 52. No. 16. pp. 2088-2091. [Тип: Статья, Год: 2018]
  36. Fedorov V.V., Bolshakov A.D., Dvoretckaia L.N., Sapunov G.A., Kirilenko D.A., Mozharov A.M., Shugurov K.Y., Shkoldin V.A., Cirlin G.E., Mukhin I.S. Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching. Semiconductors. 2018. Vol. 52. No. 16. pp. 2092-2095. [Тип: Статья, Год: 2018]
  37. Fedorov V.V., Bolshakov A.D., Mozharov A.M., Sapunov G.A., Shtrom I.V., Kirilenko D.A., Sitnikova A.A., Mukhin I.S. Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon. Journal of Physics: Conference Series. 2017. Vol. 917. No. 3. pp. 032040. [Тип: Статья, Год: 2017]
  38. Bolshakov A.D., Mozharov A.M., Sapunov G.A., Fedorov V.V., Dvoretckaia L.N., Mukhin I.S. Theoretical modeling of the self-catalyzed nanowire growth: nucleation- and adsorption-limited regimes. Materials Research Express. 2017. Vol. 4. No. 12. pp. 125027. [Тип: Статья, Год: 2017]
  39. Mozharov A.M., Komissarenko F.E., Bolshakov A.D., Fedorov V.V., Sapunov G.A., Cirlin G.E., Mukhin I.S. Modeling the semiconductor devices with negative differential resistance based on nitride nanowires. Journal of Physics: Conference Series. 2017. Vol. 917. No. 8. pp. 082017. [Тип: Статья, Год: 2017]